Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• property modulations of the as-deposited and annealed films. The analyses show a reasonably good correlation with photoelectron spectroscopic measurements on the films and the bulk I–V characteristics acquired on a series of WOx/p-Si heterojunction diodes. The presence of a critical WOx thickness is

• transport through the same. The I–V characteristics were recorded with a positive bias applied to the p-Si substrate. Figure 6a and Figure 6b show, respectively, the semi-log I–V curves (linear I–V curves are presented in Figure S4 of Supporting Information File 1) of WOx/p-Si heterostructures before and

• thickness [51]. Evidently, more symmetric I–V characteristics are observed with increasing film thickness, which can be quantitatively verified from the calculated rectification ratio (RR) values of the NS-WOx/p-Si heterojunctions, as summarised in Table 1. The RR values are calculated employing Equation 3

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• results. Measurement results of samples of receiving systems with CEBs Measurements of samples from the LSPE VB 210/240 SINS1 series, deposited at NNSTU, were performed in a sorption 3He cryostat at a temperature of 300 mK. Current–voltage (I–V) characteristics (Figure 5), frequency response (Figure 6

• equipment in our lab. Hence, the results might be different from the expected values. As can be seen from Figure 5, the I–V characteristics of the 210 and 240 GHz arrays are quite close, which was not achieved at the first try. The normal structure resistance at 210 GHz (Figure 5, blue curve) was 200 Ω, the

• -tie antennas are visible. (b) SEM image where the required elements are painted with pseudocolors; red: normal metal absorber, green: SN contact, and blue: SIN tunnel junctions. I–V characteristics of two receiving structures of a sample receiving system from the LSPE VB 210/240 SINS1 series. Measured

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• [41]. The optical characteristics of the device were examined through I–V and I–t measurements. Figure 3a shows I–V characteristics of a fabricated photodetector based on CuO NPs/ZnO NRs under visible-light exposure (395 nm) with different intensities. The device exhibits symmetrical and linear I–V

• sensitivity to other wavelengths including 464 nm (blue), 532 nm (green), and 640 nm (red). Figure 5a shows the room temperature I–V characteristics of the CuO NPs/ZnO NRs photodetector under different wavelengths. The photoresponse to wavelengths longer than 395 nm is in accordance with the UV–vis absorbance

• spectra of the pure ZnO NRs and CuO NPs/ZnO NRs. (a) I–V characteristics and (b) I–t curves of the photodetector based on CuO NPs/ZnO NRs heterojunctions under 395 nm exposure with different light intensities. I–t curves after three cycles under 395 nm visible-light illumination with two power densities

A distributed active patch antenna model of a Josephson oscillator

• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2023, 14, 151–164, doi:10.3762/bjnano.14.16

• emitted but mostly reflected backwards in the JJ. Propagation and reflection of FFO pulses in the transmission line (TL) formed by the JJ leads to the formation of standing waves. The corresponding cavity mode resonances are manifested by Fiske steps in the current–voltage (I–V) characteristics [16][28

• supercurrent occurs, leading to the appearance of Fiske steps in the I–V curves. The excess dc current, obtained from Equation 16, is [16][29][31] Figure 2a shows calculated I–V characteristics of a JJ with a = 5λJ, α = 0.1 and at a magnetic field corresponding to Φ = 5Φ0 in the JJ. Blue symbols represent the

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• profound step structure in the current–voltage (I–V) characteristics. The resonances are caused by the formation of surface plasmon-type standing waves at the electrode–substrate interface [34]. Thus, the electrodes themselves act as a common external resonator, facilitating the effective indirect coupling

• in the reverse branch of the I–V characteristics for both arrays. As shown in [9][34], they are caused by propagation of surface plasmon-type EMWs along the Nb electrode–Si substrate interface. These steps appear when the Josephson frequency coincides with one of the cavity mode frequencies

• steps with small separation in voltage. The linear array, Figure 1d, exhibits several evenly spaced steps. The I–V characteristics are hysteretic, with the retrapping current being significantly smaller than the switching current. The hysteresis leads to a metastability, which allows for the observation

Induced electric conductivity in organic polymers

• Konstantin Y. Arutyunov,
• Anatoli S. Gurski,
• Vladimir V. Artemov,
• Alexander L. Vasiliev,
• Azat R. Yusupov,
• Danfis D. Karamov and
• Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

• thickness, the current decreases. Therefore, they were measured over a wide voltage range. The shape of the I–V characteristics depends on the energy spectrum. Several regimes could be distinguished on the I–V plots: (a) ohmic mode at low voltages: thermally generated charge carriers prevail; (b) mode with

• the effect of electronic switching to a highly conductive state can be observed (Figure 3f). Such a bi-stable switching is often used in practice to create non-volatile memory elements. Presented in Figure 3 I–V characteristics do not contradict the presented above model considerations. In this regard

• , the ohmic behavior of the I–V characteristics at low voltages is due to intrinsic charge carriers. If, however, the concentration of injected carriers begins to exceed the concentration of intrinsic carriers, then the transition to a sublinear regime is observed. The corresponding estimations give the

Nonlinear features of the superconductor–ferromagnet–superconductor φ₀ Josephson junction in the ferromagnetic resonance region

• Aliasghar Janalizadeh,
• Ilhom R. Rahmonov,
• Sara A. Abdelmoneim,
• Yury M. Shukrinov and
• Mohammad R. Kolahchi

Beilstein J. Nanotechnol. 2022, 13, 1155–1166, doi:10.3762/bjnano.13.97

• different approximations. Finally, we demonstrate the negative differential resistance in the I–V characteristics and its correlation with the fold-over effect. Keywords: Duffing oscillator; Josephson junction; Landau–Lifshitz–Gilbert equation; Introduction The coupling of the superconducting phase

• –voltage (I–V) characteristics by magnetic dynamics in the ferromagnet, in particular, to create a DC component in the superconducting current [6][7][8]. A remarkable manifestation of this coupling is the possibility to stimulate a magnetization reversal in the ferromagnetic layer by applying a current

• simulations. The role of the DC superconducting current and the state with negative differential resistance (NDR) in the I–V characteristics were not clarified. Also, the effects of the Josephson-to-magnetic energy ratio and the spin–orbit coupling (SOC) were not investigated at that time. In the present

Modeling a multiple-chain emeraldine gas sensor for NH₃ and NO₂ detection

• Hana Sustkova and
• Jan Voves

Beilstein J. Nanotechnol. 2022, 13, 721–729, doi:10.3762/bjnano.13.64

• -equilibrium Green’s functions formalism. The numerical results are compared with experimental data of ammonia and nitrogen dioxide detection. Multiple molecules of PANI in the form of emeraldine salt were studied with more than one absorbed molecule of ammonia or nitrogen dioxide. From the I–V characteristics

• I–V characteristics. As already written in [12], calculation of the electron density is based on the occupied eigenstates of the Kohn–Sham Hamiltonian, with the Ansatz of a Fermi–Dirac distribution. QuantumATK divides this density into contributions from “left” and from “right”, while the model is

• the transmission spectrum was carried out. Transmission spectra were used to obtain relevant I–V characteristics. There were only one or two molecule chains in the calculations and only several ammonia or nitrogen dioxide molecules are affecting the PANI molecules. Therefore, the quantity of free

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• [2][21][39]. Some examples of resistive switching behavior were also found in structures based on nanowires [40] or nanotubes [25][40], where the resistive switching device is characterized by the presence of a pinched or nonpinched hysteresis loop in the I–V characteristics in the DC plane. Our

• -resistance state until, again, the direction of the current was changed and the structure returned to its low-resistance state. Measurements of the I–V characteristics were performed for several tens of cycles. LRS operation was reached when the forcing current was about 1.32 × 10−8 A (or −1.74 × 10−8 A

Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• photolithography and argon-ion etching. Mesa structures are formed at the overlap between the line and the electrodes, as indicated in Figure 1a. Figure 2a,b shows current–voltage (I–V) characteristics of mesas of whisker- and crystal-based devices, respectively. The I–V curves are fairly similar. They contain

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• with the Ga+ focused ion beam (FIB), gas injection system (GIS), and nanomanipulator OmniProbe 400 (Oxford Instruments) with a tungsten tip. The nanomanipulator enabled a direct contact of single as-grown NWs. The current–voltage (I–V) characteristics were measured using a Keithley 237 source

• (b) the Cr 2p3/2 region after 90 s of Ar+ ion sputtering. (a) I–V characteristics of the nanowire–deposit system; (b) SEM image of a contacted single CrGex nanowire before the resistivity measurement. Supporting Information Supporting Information File 94: Analysis of CrGex nanowires, experimental

• contacting for I–V characteristics, and scheme of CVD apparatus. Funding This research was funded by the Czech Academy of Sciences (grant Strategy AV21 “Nanostructured materials for energy conversion”) and the Grant Agency of the Czech Republic (L200721851) is gratefully acknowledged.

Electrical, electrochemical and structural studies of a chlorine-derived ionic liquid-based polymer gel electrolyte

• Ashish Gupta,
• Amrita Jain,
• Manju Kumari and
• Santosh K. Tripathi

Beilstein J. Nanotechnol. 2021, 12, 1252–1261, doi:10.3762/bjnano.12.92

• voltage of synthesized electrolytes can also be determined by this method. In the present work, the electrochemical stability of polymer gel electrolytes has been recorded by using cyclic voltammetry. Figure 10 shows the I–V characteristics of the optimized polymer gel electrolytes which was carried out

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• , EML, ETL, and cathode) is analyzed. Subsequently, various characteristics of LED containing carbon nanostructures and plasmonic NP are discussed in terms of EQE, internal quantum efficiency, luminance, EL, and current–voltage (I–V) characteristics. A list of various abbreviations employed in this

• reduced its work function by nearly 1 eV. Furthermore, the I–V characteristics of the device with Ca-doped graphene/Alq3/Ag manifest a two-fold increase in current (at 2 V bias) as compared to only graphene. Similarly, Chang et al. have doped graphene with n-type CsF or Cs2CO3 on a SiO2 substrate, thus

• -layer (4L) graphene and (b) the I–V characteristics of UV LED with and without few-layer graphene-based conductive electrodes. Figure 1a and Figure 1b were adapted from [39], with the permission of AIP Publishing. This content is not subject to CC BY 4.0. Cross-sectional scanning electron microscopy

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• different illumination conditions. The I–V characteristics as function of the illumination power density are shown in Figure 4. The obtained photodiode exhibited normal diode characteristics and good rectifying properties. The rectifying ratio (RR) values of the photodiode changed with increasing light

• /CuNiCoS4/p-Si photodiode, and it can be determined from I–V characteristics [28]. Rj contains two components: shunt resistance (Rsh) due to contact of the metal–semiconductor interface and series resistance (Rs) owing to interfacial layers [29]. Rj can be calculated as follows: The Rj–V plots of the Au

• reflectance graph) and (b) bandgap energy diagram of CuNiCoS4 nanocrystals. The I–V characteristics as well as RR changes of the Au/CuNiCoS4/p-Si photodiode under different illumination intensities. The values of n and ϕb of the Au/CuNiCoS4/p-Si photodiode as functions of the illumination power density. Rj–V

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• ) of the samples of the B series. Energy band diagram of the fabricated AZO/Al2O3/p-GaAs devices. (a) EQE of sulfur-passivated samples (A series). (b) EQE of non-passivated samples (B series). I–V characteristics of the measured samples of A series (a) and B series (b). The content of O, Zn, Al, Ga

The nanomorphology of cell surfaces of adhered osteoblasts

• Christian Voelkner,
• Mirco Wendt,
• Regina Lange,
• Max Ulbrich,
• Martina Gruening,
• Susanne Staehlke,
• Barbara Nebe,
• Ingo Barke and
• Sylvia Speller

Beilstein J. Nanotechnol. 2021, 12, 242–256, doi:10.3762/bjnano.12.20

• measurement of I–V characteristics [21]. The bias voltage applied between pipette and bath electrode was approximately 100 mV. Both electrodes were non-polarizable (Ag/AgCl). For SICM topography measurements the nanopipette approached the surface until the setpoint of 0.98 nA (corresponding to an ion current

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• upper one was transparent to the incident light, have been used for electrical and photoelectrical measurements. Figure 3 and Figure 4 show the current–voltage (I–V) characteristics of the amorphous thin-film HS Al–As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge.0.30As0.04S0.66–Al with positive or negative

• –V characteristics are described by the expression I = A·Vm, where A is a constant coefficient, and m is the exponent. When carriers are injected from an amorphous or crystalline layer (or electrode) into another amorphous layer, m cannot take values larger than 1. The part of the I–V characteristics

• with m = 2 is explained by the existence of an exponential distribution of the localized sates in the bandgap of the amorphous material. In this case the I–V characteristics are described by the expression [15]: where j is the current density, Nv is the effective density of states in the valence band

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• (Figure 7b and Figure 7c), show that for an amorphous region programmed to 10 MΩ, a Vthreshold of 1.29 ± 0.04 V is required for threshold switching, indicating an Lamorphized of 68.98 ± 1.94 nm. The loss of electrical connection in the wire was confirmed by post-pulse DC I–V characteristics and SEM

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• . The current–voltage (I–V) characteristics of Ag2S/Si under dark and illuminated conditions were investigated at room temperature using a digital power supply, an electrometer, and a tungsten lamp. The spectral responsivity of the photodetector was measured using a calibrated monochromator in the

• Ag2S nanoparticles, while the origin of carbon is CTAB. Hall measurement revealed that the Ag2S had a negative Hall coefficient, indicating that it is an n-type semiconductor. This finding agrees well with [39]. Figure 11 shows the dark I–V characteristics of an n-Ag2S/p-Si heterojunction prepared

• decrease in the electrical resistivity of Ag2S. Figure 12 illustrates the I–V characteristics under illumination of the heterojunctions at reverse bias. The photocurrent of the heterojunction increased from 460 to 1500 μA at 7.5 V after CTAB was added to the Tu solution. This result can be ascribed to the

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• spectra of different GNM materials. (a) A4A4-6, Z6Z6-6 and A4Z6-6 and (b) A4A4-24, Z12Z12-24 and A4Z6-24. Current–voltage (I–V) characteristics of (a) different GNR devices and (b) GNM and graphene devices. Calculated energy gaps for GNMs with hydrogen passivation of carbon atoms in proximity to the holes

High dynamic resistance elements based on a Josephson junction array

• Konstantin Yu. Arutyunov and
• Janne S. Lehtinen

Beilstein J. Nanotechnol. 2020, 11, 417–420, doi:10.3762/bjnano.11.32

• external drive, fRF, should result in quantized singularities (Bloch steps) at current values I(n) = n(2e)fRF, where 2e is the charge of the Cooper pair and n = 1,2,3... are integers. Furthermore, the study of QPSJ I–V characteristics demonstrating Coulomb blockade at zero current, I = 0, and voltages of V

• application of the magnetic field only monotonically suppresses the superconducting gap. The corresponding I–V dependence can be understood as a tunnel characteristic of multiple SIS junctions connected in series. The I–V characteristics (Figure 2a) with a gap of ≈10 mV corresponds well with 25 SIS junctions

• test sample fabricated from superconducting thin film aluminum oxidized in situ to form tunnel barriers. Left panel: overview of the structure. Right panel: details of the JJ element. (a) Experimental I–V characteristics of 50 pairs of Al–AlOx junctions connected in series. Inset shows a schematic of

Anomalous current–voltage characteristics of SFIFS Josephson junctions with weak ferromagnetic interlayers

• Tairzhan Karabassov,
• Anastasia V. Guravova,
• Aleksei Yu. Kuzin,
• Elena A. Kazakova,
• Shiro Kawabata,
• Boris G. Lvov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2020, 11, 252–262, doi:10.3762/bjnano.11.19

• that increasing αm the length of the superconducting correlations decay in the ferromagnetic layers decreases, see Equation 13, and the suppression of superconducting correlations in the F layers occurs faster. We can compare these results with the I–V characteristics of SIFS Josephson junctions [45

• structures Nf1(E − eV) Nf2(E) in the integrand of the current equation, Equation 16, produce more complex behavior of the I–V characteristics. We also notice that in recent experiments on SFIFS junctions as injectors of superconductor-ferromagnetic transistors some fine structures of the subgap quasiparticle

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• –matrix multiplication [10][11][12]. An access to a continuum of resistance states exhibiting highly linear current–voltage [I(V)] characteristics were exploited to achieve a numerical precision up to 8 bits. Ag-based filamentary resistive switches [13][14][15][16][17][18][19][20][21][22][23][24][25][26

• keep the junction resistance in the targeted metallic resistance range, where the nonlinear tunneling I(V) characteristics, which are unfavorable for neuromorphic operations, are avoided. These characteristics were further investigated as a function of the amplitude and the frequency fdrive of the

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• within OSC-based SAMs with regions of insulating SAM made from large band gap alkanethiolates. The new method is demonstrated using a phenyl-linked anthracenethiolate (PAT), 4-(anthracene-2-ylethynyl)benzyl thiolate. I–V characteristics of differently shaped PAT-islands were measured using the AFM tip as

• performance of field effect transistor devices using pentacene as organic semiconductor [33]. In that work, the increase in performance was attributed to the reduced sheet resistance for charge transport in the anthracenethiol monolayer supporting the pentacene multilayer. In order to study the I–V

• characteristics of differently shaped islands within a PAT SAM, first PAT-layers were deposited on the Au(111) surface by immersing Au substrates into ethanol solution of PAT protected with a thioester group. Deposition was carried out at 70 °C. At this elevated temperature the thioester protective group was

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward

• piezo effect can be effectively tuned and controlled by mechanical loadings. Meanwhile, numerical results show that a loading location closer to the SCZ produces a stronger effect on the I–V characteristics of a piezoelectric p–n junction, implying that the tuning effect of mechanical loadings depends

• tuning performance on higher doped piezoelectric p–n junctions requires the prestress loadings to be applied closer to the interface of p- and n-zone. This study on a non-equilibrium process of piezoelectric p–n junctions has significance for piezotronics. Keywords: depletion layer; I–V characteristics